CPM2-1200-0160B Datasheet - Cree

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CPM2-1200-0160B Silicon Carbide Power MOSFET

VDS 1200 V CPM2-1200-0160B Silicon Carbide Power MOSFET TM Z-FET MOSFET .

CPM2-1200-0160B-Cree.pdf

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Datasheet Details

Part number:

CPM2-1200-0160B

Manufacturer:

Cree

File Size:

425.02 KB

Description:

Silicon Carbide Power MOSFET

Features

* Package ID @ 25˚C 17.7 A RDS(on) 160 mΩ N-Channel Enhancement Mode
* High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Resistant to Latch-Up Benefits

Applications

* Auxiliary Power Supplies Solar Inverters High Voltage DC/DC Converters PFC Boost Circuits Part Number CPM2-1200-0160B Package Die Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Continuous Drain Current Value 17.7 11 45 -10

CPM2-1200-0160B Distributors

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