CPM2-1200-0160B - Silicon Carbide Power MOSFET

Cree

CPM2-1200-0160B Description

VDS 1200 V CPM2-1200-0160B Silicon Carbide Power MOSFET TM Z-FET MOSFET .

CPM2-1200-0160B Features

* Package ID @ 25˚C 17.7 A RDS(on) 160 mΩ N-Channel Enhancement Mode
* High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Resistant to Latch-Up Benefits

CPM2-1200-0160B Applications

* Auxiliary Power Supplies Solar Inverters High Voltage DC/DC Converters PFC Boost Circuits Part Number CPM2-1200-0160B Package Die Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Continuous Drain Current Value 17.7 11 45 -10

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CPM2-1200-0160B Datasheet Preview — Preview of CPM2-1200-0160B PDF

Datasheet Details

Part number: CPM2-1200-0160B
Manufacturer: Cree
File Size: 425.02 KB
Datasheet: CPM2-1200-0160B-Cree.pdf
Description: Silicon Carbide Power MOSFET

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Silicon Carbide Power MOSFET Cree

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