CPM2-1200-0040B Silicon Carbide Power MOSFET

Cree

Description

VDS 1200 V CPM2-1200-0040B Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C 36 A RDS(on) 40 mΩ N-Channel Enhancement Mode.

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Datasheet Specifications

Part number: CPM2-1200-0040B
Manufacturer: Cree
File Size: 418.05 KB
Datasheet: CPM2-1200-0040B-Cree.pdf
Description: Silicon Carbide Power MOSFET

Features

* Chip Outline
* New C2M SiC MOSFET technlogy
* High Blocking Voltage with Low On-Resistance
* High Speed Switching with Low Capacitances
* Easy to Parallel and Simple to Drive
* Avalanche Ruggedness
* Resistant to Latch-Up
* Halogen Fre

Applications

* Solar Inverters
* Switch Mode Power Supplies
* High Voltage DC/DC converters
* Battery Chargers
* Motor Drives
* Pulsed Power Applications Part Number CPM2-1200-0040B Die Size (mm) 3.10 x 5.90 Maximum Ratings (TC = 25 ˚C unless otherwise spe

CPM2-1200-0040B Distributors

📁 Related Datasheet

CPM2-1200-0025A CPM2-1200-0080A CPM2-1200-0080B CPM2-1700-0045B CPM2C CPM-2F

📌 All Tags

CPM2-1200-0040B Silicon Carbide Power MOSFET Cree

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