CY62147G 4-Mbit (256K words x 16 bit) Static RAM

Cypress Semiconductor

Description

CY62147G/CY621472G CY62147GE MoBL® 4-Mbit (256K words × 16-bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (256K words × 16-bit) Static RAM w.
CY62147G and CY62147GE are high-performance CMOS low-power (MoBL) SRAM devices with embedded ECC.

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Datasheet Specifications

Part number: CY62147G
Manufacturer: Cypress Semiconductor
File Size: 475.21 KB
Datasheet: CY62147G-CypressSemiconductor.pdf
Description: 4-Mbit (256K words x 16 bit) Static RAM

Features

* High speed: 45 ns/55 ns
* Ultra-low standby power
* Typical standby current: 3.5 A
* Maximum standby current: 8.7 A
* Embedded ECC for single-bit error correction[1, 2]
* Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V
* 1.0-V data retention

CY62147G Distributors

📁 Related Datasheet

CY62146DV30 CY62146G CY62146G-MoBL CY62146GE CY62146GESL CY62146GN

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CY62147G 4-Mbit 256K words bit Static RAM Cypress Semiconductor

Cypress Semiconductor CY62147G-like datasheet