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CY62147G - 4-Mbit (256K words x 16 bit) Static RAM

Cypress Semiconductor

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Datasheet Details

Part number	CY62147G
Manufacturer	Cypress Semiconductor
File Size	475.21 KB
Description	4-Mbit (256K words x 16 bit) Static RAM
Datasheet	CY62147G-CypressSemiconductor.pdf

CY62147G Product details

Description

CY62147G and CY62147GE are high-performance CMOS low-power (MoBL) SRAM devices with embedded ECC. CE1

Features

High speed: 45 ns/55 ns.
Ultra-low standby power.
Typical standby current: 3.5 A.
Maximum standby current: 8.7 A.
Embedded ECC for single-bit error correction[1, 2].
Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V.
1.0-V data retention.
TTL-compatible inputs and outputs.
Error indication (ERR) pin to indicate 1-bit error detection and correction.
Pb-free 48-ball VFBGA and 44-pin TSOP II packages Functional.

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Published: Apr 29, 2015 |