Description
CY62147G/CY621472G CY62147GE MoBL® 4-Mbit (256K words × 16-bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (256K words × 16-bit) Static RAM w.
CY62147G and CY62147GE are high-performance CMOS low-power (MoBL) SRAM devices with embedded ECC.
Features
* High speed: 45 ns/55 ns
* Ultra-low standby power
* Typical standby current: 3.5 A
* Maximum standby current: 8.7 A
* Embedded ECC for single-bit error correction[1, 2]
* Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V
* 1.0-V data retention
