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CY62147GE30 Datasheet - Cypress Semiconductor

CY62147GE30 4-Mbit (256K words x 16 bit) Static RAM

CY62147G and CY62147GE are high-performance CMOS low-power (MoBL) SRAM devices with embedded ECC. Both devices are offered in single and dual chip enable options and in multiple pin configurations. The CY62147GE device includes an ERR pin that signals an error-detection and correction event during a.

CY62147GE30 Features

* High speed: 45 ns/55 ns

* Ultra-low standby power

* Typical standby current: 3.5 A

* Maximum standby current: 8.7 A

* Embedded ECC for single-bit error correction[1, 2]

* Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V

* 1.0-V data retention

CY62147GE30 Datasheet (475.21 KB)