CY7C1386C - (CY7C1386C / CY7C1387C) 18-Mb (512K x 36/1M x 18) Pipelined DCD Sync SRAM

Cypress Semiconductor

CY7C1386C Datasheet Preview — Preview of CY7C1386C PDF

Datasheet Details

Part number	CY7C1386C
Manufacturer	Cypress Semiconductor
File Size	731.23 KB
Description	(CY7C1386C / CY7C1387C) 18-Mb (512K x 36/1M x 18) Pipelined DCD Sync SRAM
Datasheet	CY7C1386C_CypressSemiconductor.pdf

CY7C1386C Product details

Description

1] The CY7C1386C/CY7C1387C SRAM integrates 524,288 x 36 and 1048,576 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation.All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK).The synchronous inputs include all addresses, all data inputs, address-pipelining Chip Enable (CE1), depth-expansion Chip Enables (CE2 and CE3[2]), Burst Control inputs (ADSC, ADSP, and ADV), Write Enables (BWX,

Features

Supports bus operation up to 250 MHz.
Available speed grades are 250, 225, 200 and 167 MHz.
Registered inputs and outputs for pipelined operation.
Optimal for performance (Double-Cycle deselect).
Depth expansion without wait state.
3.3V.
5% and +10% core power supply (VDD).
2.5V / 3.3V I/O operation.
Fast clock-to-output times.
2.6 ns (for 250-MHz device).
2.8 ns (for 225-MHz device).
3.0.

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Other Datasheets by Cypress Semiconductor

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Published: Oct 11, 2006 |