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CY7C1413BV18 - (CY7C14xxBV18) 36-Mbit QDR-II SRAM 4-Word Burst Architecture

General Description

The CY7C1411BV18, CY7C1426BV18, CY7C1413BV18, and CY7C1415BV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR™-II architecture.

QDR-II architecture consists of two separate ports to access the memory array.

Key Features

  • Configurations CY7C1411BV18.
  • 4M x 8 CY7C1426BV18.
  • 4M x 9 CY7C1413BV18.
  • 2M x 18 CY7C1415BV18.
  • 1M x 36 Separate independent read and write data ports.
  • Supports concurrent transactions 300 MHz clock for high bandwidth 4-word burst for reducing address bus frequency Double Data Rate (DDR) interfaces on both read and write ports (data transferred at 600 MHz) at 300 MHz Two input clocks (K and K) for precise DDR timing.
  • SRAM uses rising edges only.

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