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GVT7C1325A, GVT71256E18 256K x 18 Synchronous Flow Through Burst SRAM

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Description

( DataSheet : www.DataSheet4U.com ) 325A CY7C1325A/GVT71256E18 256K x 18 Synchronous Flow-Through Burst SRAM .
The Cypress Synchronous Burst SRAM family employs highspeed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal techno.

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This datasheet PDF includes multiple part numbers: GVT7C1325A, GVT71256E18. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
GVT7C1325A, GVT71256E18
Manufacturer
Cypress Semiconductor
File Size
685.75 KB
Datasheet
GVT71256E18_CypressSemiconductor.pdf
Description
256K x 18 Synchronous Flow Through Burst SRAM
Note
This datasheet PDF includes multiple part numbers: GVT7C1325A, GVT71256E18.
Please refer to the document for exact specifications by model.

Features

* Fast access times: 7.5 and 8 ns Fast clock speed: 117 and 100 MHz Provide high-performance 2-1-1-1 access rate Fast OE access times: 4.0 ns

Applications

* Low profile 119-lead, 14-mm x 22-mm BGA (Ball Grid Array) and 100-pin TQFP packages The CY7C1325A/GVT71256E18 SRAM integrates 262,144x18 SRAM cells with advanced synchronous peripheral circuitry and a 2-bit counter for internal burst operation. All synchronous inputs are gated by registers controlle

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