GVT7C1362A - 256K x 36 / 512K x 18 Pipelined SRAM
The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology.
Each memory cell consists of four transistors and two high-valued resistors.
The CY7C1360A/GVT71256D36 and CY7C1362A/ GVT71512D18 SRAMs integra
GVT7C1362A Features
* Fast access times: 2.5 ns, 3.0 ns, and 3.5 ns Fast clock speed: 225, 200, 166, and 150 MHz Fast OE access times: 2.5 ns,
