GVT7C1363A - 256K x 36 / 512K x 18 Sunchronous Burse Flowthrough SRAM
The Cypress Synchronous Burst SRAM family employs highspeed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology.
Each memory cell consists of four transistors and two high-valued resistors.
The GVT71256B36/CY7C1361A and GVT71512B18/ CY7C1363A SRAMs integrat
GVT7C1363A Features
* Fast access times: 6.0, 6.5, 7.0, and 8.0 ns Fast clock speed: 150, 133, 117, and 100 MHz 1 ns set-up time and hold time Fast OE access times: 3.5 ns and 4.0 ns 3.3V
* 5% and +10% pow
