GVT7C1366A - 256K X 36/512K X 18 Pipelined SRAM
The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology.
Each memory cell consists of four transistors and two high valued resistors.
The CY7C1366A/GVT71256C36 and CY7C1367A/ GVT71512C18 SRAMs integra
GVT7C1366A Features
* Fast access times: 2.5 ns, 3.0 ns, and 3.5 ns
* Fast clock speed: 225 MHz, 200 MHz, 166 MHz, and 150 MHz
* Fast OE access times: 2.5 ns, 3.0 ns, and 3.5 ns
* Optimal for performance (two cycle chip deselect, depth expansion without wait state)
* 3.3V
