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CY62147EV30 4-Mbit (256K x 16) Static RAM

CY62147EV30 Description

CY62147EV30 MoBL® 4-Mbit (256K x 16) Static RAM .
The CY62147EV30 is a high performance CMOS static RAM (SRAM) organized as 256K words by 16 bits.

CY62147EV30 Features

* Very high speed: 45 ns Temperature ranges
* Industrial:
* 40 °C to +85 °C
* Wide voltage range: 2.20 V to 3.60 V
* Pin compatible with CY62147DV30
* Ultra low standby power
* Typical standby current: 1 A
* Maximum standby current: 7 A (Industrial)
* Ultra low act

CY62147EV30 Applications

* such as cellular telephones. The device To write to the device, take Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7) is written into the location specified on the address pins (A0 through A17). If Byte High Enable (BHE)

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Datasheet Details

Part number
CY62147EV30
Manufacturer
Cypress Semiconductor
File Size
545.98 KB
Datasheet
CY62147EV30_CypressSemiconductor.pdf
Description
4-Mbit (256K x 16) Static RAM

📁 Related Datasheet

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📌 All Tags

4-Mbit 256K Static RAM Cypress Semiconductor
Cypress Semiconductor CY62147EV30-like datasheet