* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Repetitive Avalanche Rated
* Pb-free & Halogen-free package BVDSS ID @ TA=25°C, VGS=10V RDS(ON)@VGS=10V, ID=10A RDS(ON)@VGS=4.5V, ID=8A 100V 6.2A 22.7 mΩ(typ) 27.5 mΩ(typ) Symb
MTB030N10RQ8 Datasheet (427.90 KB)
MTB030N10RQ8
Cystech Electonics
427.90 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB030N10RQ8
Spec. No. : C053Q8 Issued Date : 2016.11.04 Revised Date : Page No. : .
📁 Related Datasheet
MTB030N10RE3 N-Channel Enhancement Mode Power MOSFET (CYStech Electronics)
MTB030N04N3 N-Channel Enhancement Mode Power MOSFET (CYStech Electronics)
MTB030P06KH8 P-Channel Enhancement Mode Power MOSFET (CYStech Electronics)
MTB032P06AV8 P-Channel Enhancement Mode MOSFET (Cystech Electonics)
MTB032P06V8 P-Channel Enhancement Mode Power MOSFET (CYStech Electronics)
MTB03N03H8 N-Channel Enhancement Mode Power MOSFET (CYStech Electronics)
MTB001 High Output Interface Driver ICs (Shindengen Electric)
MTB001D01-1 LCD Module (CSOT)
MTB010A03H8 Dual N-Channel Enhancement Mode Power MOSFET (CYStech)
MTB010A06RH8 Dual N-Channel Enhancement Mode Power MOSFET (CYStech)
