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MTD170P06KN3 P-Channel Enhancement Mode MOSFET

MTD170P06KN3 Description

CYStech Electronics Corp.Spec.No.: C106N3 Issued Date : 2015.11.11 Revised Date : 2015.11.13 Page No.: 1/9 -60V P-Channel Enhancement Mode MOSFE.

MTD170P06KN3 Features

* Low gate charge
* Compact and low profile SOT-23 package
* Advanced trench process technology
* High density cell design for ultra low on resistance
* ESD protected gate
* Pb-free lead plating package Symbol MTD170P06KN3 Outline SOT-23 D Gļ¼šGate S

MTD170P06KN3 Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTD170P06KN3 CYStek Product Specification

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Datasheet Details

Part number
MTD170P06KN3
Manufacturer
Cystech Electonics
File Size
416.22 KB
Datasheet
MTD170P06KN3-CystechElectonics.pdf
Description
P-Channel Enhancement Mode MOSFET

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P-Channel Enhancement Mode MOSFET Cystech Electonics
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