MTD170P06KN3 Datasheet - Cystech Electonics

MTD170P06KN3 P-Channel Enhancement Mode MOSFET

MTD170P06KN3 Features

* Low gate charge

* Compact and low profile SOT-23 package

* Advanced trench process technology

* High density cell design for ultra low on resistance

* ESD protected gate

* Pb-free lead plating package Symbol MTD170P06KN3 Outline SOT-23 D G：Gate S

Datasheet Details

MTD170P06KN3

Cystech Electonics

416.22 KB

P-channel enhancement mode mosfet.

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