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MTE50N10BFP - N-Channel Enhancement Mode Power MOSFET

MTE50N10BFP Description

CYStech Electronics Corp.Spec.No.: C141FP Issued Date : 2015.08.18 Revised Date : Page No.: 1/ 8 N-Channel Enhancement Mode Power MOSFET MTE50N.

MTE50N10BFP Features

* RDS(ON)@VGS=7V, ID=10A
* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* Insulating package, front/back side insulating voltage=2500V(AC)
* RoHS compliant package 100V 24A 26.6 mΩ(typ) 34.2 mΩ(typ) S

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Datasheet Details

Part number
MTE50N10BFP
Manufacturer
Cystech Electonics
File Size
390.51 KB
Datasheet
MTE50N10BFP-CystechElectonics.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET Cystech Electonics
Cystech Electonics MTE50N10BFP-like datasheet