MTE50N10BFP Datasheet - Cystech Electonics

MTE50N10BFP N-Channel Enhancement Mode Power MOSFET

MTE50N10BFP Features

* RDS(ON)@VGS=7V, ID=10A

* Low On Resistance

* Simple Drive Requirement

* Low Gate Charge

* Fast Switching Characteristic

* Insulating package, front/back side insulating voltage=2500V(AC)

* RoHS compliant package 100V 24A 26.6 mΩ(typ) 34.2 mΩ(typ) S

Datasheet Details

MTE50N10BFP

Cystech Electonics

390.51 KB

N-channel enhancement mode power mosfet.

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