* RDS(ON)@VGS=7V, ID=10A
* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* Insulating package, front/back side insulating voltage=2500V(AC)
* RoHS compliant package 100V 24A 26.6 mΩ(typ) 34.2 mΩ(typ) S
MTE50N10BFP Datasheet (390.51 KB)
MTE50N10BFP
Cystech Electonics
390.51 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
Spec. No. : C141FP Issued Date : 2015.08.18 Revised Date : Page No. : 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTE50N.
📁 Related Datasheet
MTE50N10FP N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE50N10QE3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE50N45 (MTE50N45 - MTE60N40) POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS (Motorola)
MTE50N50 (MTE50N45 - MTE60N40) POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS (Motorola)
MTE5066-UR Metal Can Red Emitter (Marktech Corporate)
MTE53N50E TMOS POWER FET 53 AMPERES 500 VOLTS RDS(on) = 0.080 OHM (Motorola)
MTE55N20J3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE010N10E3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE010N10F3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTE010N10FP N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
