* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* Insulating package, front/back side insulating voltage=2500V(AC)
* RoHS compliant package Symbol MTE50N10FP Outline TO-220FP G：Gate D：Drain S：Source
MTE50N10FP Datasheet (247.76 KB)
MTE50N10FP
Cystech Electonics
247.76 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
Spec. No. : C893FP Issued Date : 2013.05.27 Revised Date : Page No. : 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTE50N1.
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