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MTE50N10QE3 - N-Channel Enhancement Mode Power MOSFET

MTE50N10QE3 Description

CYStech Electronics Corp.N-Channel Enhancement Mode Power MOSFET MTE50N10QE3 Spec.No.: C168E3 Issued Date : 2016.06.24 Revised Date : Page No.: 1.

MTE50N10QE3 Features

* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=15A 100V 29A 5.5A 26.4 mΩ(typ) Symbol MTE50N10QE3 Outline TO-220 G：

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Datasheet Details

Part number
MTE50N10QE3
Manufacturer
Cystech Electonics
File Size
346.61 KB
Datasheet
MTE50N10QE3-CystechElectonics.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET Cystech Electonics
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