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DMN14M8UFDF 12V N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

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Description

Product Summary BVDSS 12V RDS(ON) Max 6.0mΩ @ VGS = 4.5V 9.0mΩ @ VGS = 2.5V ID Max TA = +25°C 14.7A 12A .
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for.

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Datasheet Specifications

Part number: DMN14M8UFDF
Manufacturer: DIODES ↗
File Size: 732.55 KB
Datasheet: DMN14M8UFDF-DIODES.pdf
Description: 12V N-CHANNEL ENHANCEMENT MODE MOSFET

Features

* 0.6mm Profile

Applications

* Applications
* General Purpose Interfacing Switch

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DMN14M8UFDF 12V N-CHANNEL ENHANCEMENT MODE MOSFET DIODES

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