Datasheet Details
- Part number
- DMN2053UFDB
- Manufacturer
- DIODES ↗
- File Size
- 517.58 KB
- Datasheet
- DMN2053UFDB-DIODES.pdf
- Description
- DUAL N-CHANNEL MOSFET
DMN2053UFDB Description
DMN2053UFDB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary .
and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ide.
DMN2053UFDB Features
* Device
NChannel
BVDSS 20V
RDS(ON) Max
35mΩ @ VGS = 4.5V 43mΩ @ VGS = 2.5V
ID MAX TA = +25°C
4.6A 4.2A
* PCB Footprint of 4mm2
* Low On-Resistance
* Low Input Capacitance
* Low Profile, 0.6mm Maximum Height
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Haloge
DMN2053UFDB Applications
* This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications.
* Load switches
* Power management functions
* Portable power adaptors
U-DFN2020-6 (Type B)
Mechanic
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