DMN2053UQ N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

Description

AADDVVAANNCCEEDDI INFNFOORRMMAATITIOONN Product Summary BVDSS 20V RDS(ON) max 29m @ VGS = 10V 35m @ VGS = 4.5V ID max TA = +25°C 6.5A 5.4A Desc.
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for.

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Datasheet Specifications

Part number: DMN2053UQ
Manufacturer: DIODES ↗
File Size: 567.24 KB
Datasheet: DMN2053UQ-DIODES.pdf
Description: N-CHANNEL ENHANCEMENT MODE MOSFET

Features

* Low On-Resistance
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)

Applications

* Applications
* General purpose interfacing switches

DMN2053UQ Distributors

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DMN2053UQ N-CHANNEL ENHANCEMENT MODE MOSFET DIODES

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