DMN2053UFDBQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

Description

DMN2053UFDBQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Device BVDSS N-Channel 20V RDS(ON) Max 35mΩ @ VGS = 4.5V 43mΩ @ VGS = 2.5V .
and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ide.

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Datasheet Specifications

Part number: DMN2053UFDBQ
Manufacturer: DIODES ↗
File Size: 518.46 KB
Datasheet: DMN2053UFDBQ-DIODES.pdf
Description: DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features

* PCB Footprint of 4mm2
* Low On-Resistance
* Low Input Capacitance
* Low Profile, 0.6mm Maximum Height
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen- and Antimony-Free. “Green” Device (Note 3)

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DMN2053UFDBQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET DIODES

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