DMN2710UDWQ Dual N-Channel MOSFET

DIODES

Description

NEW PRODUCT ADVANCED INFORMATION DMN2710UDWQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) MAX 0.45Ω @ VGS = 4.5V 0.6Ω .
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for.

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Datasheet Specifications

Part number: DMN2710UDWQ
Manufacturer: DIODES ↗
File Size: 549.39 KB
Datasheet: DMN2710UDWQ-DIODES.pdf
Description: Dual N-Channel MOSFET

Features

* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* Complementary Pair MOSFET
* Ultra-Small Surface Mount Package
* ESD Protected
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Applications

* Applications
* Battery Operated Systems and Solid-State Relays
* Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.

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DMN2710UDWQ Dual N-Channel MOSFET DIODES

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