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DMN2710UFB N-Channel MOSFET

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Description

ADVANCED INFORMATION DMN2710UFB N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) 0.45Ω @ VGS = 4.5V 0.6Ω @ VGS = 2.5V ID TA = .
and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes.

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Features

* Footprint of Just 0.6mm2
* 13 Times Smaller Than SOT23
* Low Gate Threshold Voltage
* Fast Switching Speed
* ESD Protected Gate
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* For automotive applicati

DMN2710UFB Distributors

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Diodes DMN2710UFB-like datasheet