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DMN2710UT N-CHANNEL MOSFET

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Description

NEW PRODUCT DMN2710UT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) 0.45Ω @ VGS = 4.5V 0.6Ω @ VGS = 2.5V ID TA = +25°C 0.87.
and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, mak.

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Features

* Low On-Resistance
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* Ultra-Small Surface Mount Package
* ESD Protected Gate
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* F

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