DMN2710UV Dual N-Channel MOSFET

DIODES

Description

DMN2710UV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) 0.45Ω @VGS = 4.5V 0.6Ω @VGS = 2.5V ID @TA = +25°C 0.92A 0.8A D.
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) yet maintain superior switching performance, making it ideal.

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Datasheet Specifications

Part number: DMN2710UV
Manufacturer: DIODES ↗
File Size: 423.77 KB
Datasheet: DMN2710UV-DIODES.pdf
Description: Dual N-Channel MOSFET

Features

* Low On-Resistance
* Low Gate Threshold Voltage VGS(TH) < 1V
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* Ultra-Small Surface Mount Package
* ESD Protected Gate
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and

DMN2710UV Distributors

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DMN2710UV Dual N-Channel MOSFET DIODES

DIODES DMN2710UV-like datasheet