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1N5616-M - DIODE

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Part number 1N5616-M
Manufacturer DSI
File Size 33.66 KB
Description DIODE
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Technical Data DIODE maximum ratings Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Current Surge Peak (IFM) Current, Surge (IFM) at tp = 10 ms Max. Power Dissipation (PT) at TC = 25 °C Max. Thermal Resistance (Rth J-A) Max. Junction Temperature (TJ) 400.0 V 400.0 V empty A 1.0 A empty A 50.0 A empty W 50.0 °C/W 200.0 °C NO. TYPE empty empty CASE empty empty 1N5616-M SILICON RECTIFIER empty SOD-57 MIL-S-19500 BURN-IN 48h/125°C PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted C NO. SYMBOL CONDITIONS MIN. MAX. UNITS 1. VF IF = 1.0 A (1) - 1.2 V 2. IR VR = 400.0 V - 0.5 µA 3. IR VR = 400.0 V, TA = 100.0 °C - 25.0 µA 4. trr IF = 0.5 A, IR = 1.0 A, irr = 0.25 A - 2.0 µs 5. CT VR = 12.
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