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DS2016 - 2k x 8 3V/5V Operation Static RAM

DS2016 Description

www.maxim-ic.com DS2016 2k x 8 3V/5V Operation Static RAM .
A0 to A10 - Address Inputs DQ0 to DQ7 - Data Input/Output CE - Chip Enable Input WE - Write Enable Input OE - Output Enable Input VCC GND -.

DS2016 Features

* Low-power CMOS design
* Standby current - 50nA max at tA = +25°C VCC = 3.0V - 100nA max at tA = +25°C VCC = 5.5V - 1µA max at tA = +60°C VCC = 5.5V
* Full operation for VCC = 5.5V to 2.7V
* Data retention voltage = 5.5V to 2.0V
* Fast 5V access time - DS2016-100 100ns
* Red

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Datasheet Details

Part number
DS2016
Manufacturer
Dallas Semiconducotr
File Size
162.69 KB
Datasheet
DS2016_DallasSemiconducotr.pdf
Description
2k x 8 3V/5V Operation Static RAM

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Operation Static RAM Dallas Semiconducotr
Dallas Semiconducotr DS2016-like datasheet