* Low On-Resistance
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* ESD Protected up to 3kV
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* Qualified to AEC-Q101 Standards for
DMG5802LFX Datasheet (227.59 KB)
DMG5802LFX
227.59 KB
Dual n-channel mosfet.
DMG5802LFX
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 24V
RDS(ON)
15mΩ @ VGS = 4.5V 20mΩ @ VGS = 2.5V
ID TA = +25°C
6.5A
5.6A.
📁 Related Datasheet
DMG563H1 - Transistor
(Panasonic)
DMG563H1
Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2)
For digital circuits
Features Low collector-emitter satur.
DMG - ELECTRIC DOUBLE LAYER CAPACITORS
(Rubycon)
DMG SERIES
ELECTRIC DOUBLE LAYER CAPACITORS
DMG
.
DMG1012T - N-Channel MOSFET
(Diodes)
Features
Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected up.
DMG1012T - N-Channel MOSFET
(VBsemi)
DMG1012T
DMG1012T N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) MAX.
0.270 at VGS = 4.5 V
20 0.390 at VGS = 2.5 V
ID (A) c 0.8.
DMG1012UW - N-Channel MOSFET
(Diodes)
Features
• Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Up.
DMG1013T - P-Channel MOSFET
(Diodes)
DMG1013T
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS -20V
RDS(ON)
700mΩ @ VGS = -4.5V 900mΩ @ VGS = -2.5V 1300mΩ @ VGS = -1.8V
ID TA =.
DMG1013TQ - 20V P-CHANNEL MOSFET
(Diodes)
DMG1013TQ
20V P-CHANNEL ENHANCEMENT MODE MOSFET
NEW PRODUCT
Product Summary
BVDSS -20V
RDS(ON) Max
700mΩ @ VGS = -4.5V 900mΩ @ VGS = -2.5V 1300mΩ .
DMG1013UW - P-Channel MOSFET
(Diodes)
DMG1013UW
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed .
