DMG5802LFX Dual N-Channel MOSFET

Diodes

Description

DMG5802LFX DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 24V RDS(ON) 15mΩ @ VGS = 4.5V 20mΩ @ VGS = 2.5V ID TA = +25°C 6.5A 5.6A.
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it i.

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Datasheet Specifications

Part number: DMG5802LFX
Manufacturer: DIODES ↗
File Size: 227.59 KB
Datasheet: DMG5802LFX-Diodes.pdf
Description: Dual N-Channel MOSFET

Features

* Low On-Resistance
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* ESD Protected up to 3kV
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* Qualified to AEC-Q101 Standards for

Applications

* Applications
* DC-DC Converters

DMG5802LFX Distributors

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DMG5802LFX Dual N-Channel MOSFET Diodes

Diodes DMG5802LFX-like datasheet