DMG9926UDM Datasheet, Mosfet, Diodes

DMG9926UDM Features

  • Mosfet
  • Low Gate Charge
  • Low RDS(ON):
  • 28mΩ @VGS = 4.5V
  • 32mΩ @VGS = 2.5V
  • 40mΩ @VGS = 1.8V
  • Low Input/Output Leakage
  • Lead Free

PDF File Details

Part number:

DMG9926UDM

Manufacturer:

DIODES ↗

File Size:

135.26kb

Download:

📄 Datasheet

Description:

Dual n-channel mosfet.

Datasheet Preview: DMG9926UDM 📥 Download PDF (135.26kb)
Page 2 of DMG9926UDM Page 3 of DMG9926UDM

TAGS

DMG9926UDM
Dual
N-Channel
MOSFET
Diodes

📁 Related Datasheet

DMG9926USD - Dual N-Channel MOSFET (Diodes)
NEW PRODUCT DMG9926USD DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary V(BR)DSS 20V RDS(ON) max 24mΩ @ VGS = 4.5V 29mΩ @ V.

DMG9933USD - Dual P-Channel MOSFET (Diodes)
DMG9933USD DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -20V RDS(ON) Max 75mΩ @ VGS = -4.5V 110mΩ @ VGS = -2.5V ID Max TA = +25°C .

DMG9N65CT - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance :.

DMG9N65CT - N-Channel MOSFET (Diodes)
OBSOLETE – PART DISCONTINUED PART OBSOLETE - Use DMG7N65SCT Green DMG9N65CT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 650V RDS(ON).

DMG9N65CTI - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance :.

DMG9N65CTI - N-CHANNEL ENHANCEMENT MODE MOSFET (Diodes)
Product Summary V(BR)DSS 650V RDS(ON) 1.3Ω @ VGS = 10V Package ITO-220AB ID TC = +25°C 9.0A Description This new generation plementary dual MO.

DMG - ELECTRIC DOUBLE LAYER CAPACITORS (Rubycon)
DMG SERIES ELECTRIC DOUBLE LAYER CAPACITORS DMG .

DMG1012T - N-Channel MOSFET (Diodes)
Features  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected up.

DMG1012T - N-Channel MOSFET (VBsemi)
DMG1012T DMG1012T N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) MAX. 0.270 at VGS = 4.5 V 20 0.390 at VGS = 2.5 V ID (A) c 0.8.

DMG1012UW - N-Channel MOSFET (Diodes)
Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Up.

Stock and price

Diodes Incorporated
MOSFET 2N-CH 20V 4.2A SOT26
DigiKey
DMG9926UDM-7
39000 In Stock
Qty : 6000 units
Unit Price : $0.14
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts