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DMG9N65CT

N-Channel MOSFET

DMG9N65CT Features

* Drain Current

* ID= 9A@ TC=25℃

* Drain Source Voltage- : VDSS= 650V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 1.3Ω(Max)

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* Designed for use i

DMG9N65CT General Description


*Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous 650 V ±30 V 9 A IDM Drain Current-Single Pluse PD.

DMG9N65CT Datasheet (256.50 KB)

Preview of DMG9N65CT PDF

Datasheet Details

Part number:

DMG9N65CT

Manufacturer:

INCHANGE

File Size:

256.50 KB

Description:

N-channel mosfet.

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DMG9N65CT N-Channel MOSFET INCHANGE

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