DMG9926USD Dual N-Channel MOSFET

Diodes

Description

NEW PRODUCT DMG9926USD DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary V(BR)DSS 20V RDS(ON) max 24mΩ @ VGS = 4.5V 29mΩ @ V.
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high.

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Datasheet Specifications

Part number: DMG9926USD
Manufacturer: DIODES ↗
File Size: 246.07 KB
Datasheet: DMG9926USD-Diodes.pdf
Description: Dual N-Channel MOSFET

Features

* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* Qualified to AEC-Q101 Standards f

Applications

* Applications
* Power Management Functions
* DC-DC Converters

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DMG9926USD Dual N-Channel MOSFET Diodes

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