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DMN2019UTS N-Channel MOSFET

DMN2019UTS Description

NEW PRODUCT DMN2019UTS 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(ON) max 18.5mΩ @ VGS = 10V 21mΩ @ VGS = 4.5V 24mΩ @ .
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it i.

DMN2019UTS Features

* Low On-Resistance
* Low Input Capacitance
* Fast Switching Speed
* ESD Protected up to 2KV
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* Qualified to AEC-Q101 standards for Hig

DMN2019UTS Applications

* Applications
* Power management functions
* Load Switch Mechanical Data
* Case: TSSOP-8
* Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
* Moisture Sensitivity: Level 1 per J-STD-020
* Terminal Co

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N-Channel MOSFET Diodes
Diodes DMN2019UTS-like datasheet