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DMN3110S N-Channel MOSFET

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Description

DMN3110S N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) max 73mΩ @ VGS = 10V 110mΩ @ VGS = 4.5V ID max TA = +25°C 3.3A 2.7.
and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making i.

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Datasheet Specifications

Part number
DMN3110S
Manufacturer
DIODES ↗
File Size
464.53 KB
Datasheet
DMN3110S-Diodes.pdf
Description
N-Channel MOSFET

Features

* Low On-Resistance
* Low Input Capacitance
* Fast Switching Speed
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)

Applications

* requiring specific change control (i. e. : parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www. diodes. com/products/automotive/automotiveproducts/.

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