DMP1080UCB4 P-Channel MOSFET

Diodes

Description

DMP1080UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ.@ VGS = -4.5V, TA = +25°C) VDSS -12V RDS(on) 65mΩ Qg 2.5nC Qgd 0.6nC ID -3.3.
This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal.

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Datasheet Specifications

Part number: DMP1080UCB4
Manufacturer: DIODES ↗
File Size: 377.52 KB
Datasheet: DMP1080UCB4-Diodes.pdf
Description: P-Channel MOSFET

Features

* LD-MOS Technology with the Lowest Figure of Merit: RDS(on) = 65mΩ to Minimize On-State Losses Qg = 2.5nC for Ultra-Fast Switching
* Vgs(th) = -0.6V typ. for a Low Turn-On Potential
* CSP with Footprint 1.0mm × 1.0mm
* Height = 0.62mm for Low Profile
* ESD = 3kV HBM Protection o

Applications

* Applications
* Battery Management
* Load Switch

DMP1080UCB4 Distributors

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DMP1080UCB4 P-Channel MOSFET Diodes

Diodes DMP1080UCB4-like datasheet