* LD-MOS Technology with the Lowest Figure of Merit: RDS(on) = 85mΩ to Minimize On-State Losses Qg = 3.7nC for Ultra-Fast Switching
* Vgs(th) = -0.6V typ. for a Low Turn-On Potential
* CSP with Footprint 1.0mm × 1.0mm
* Height = 0.62mm for Low Profile
* ESD = 3kV HBM Protection o
DMP1096UCB4 Datasheet (289.43 KB)
DMP1096UCB4
289.43 KB
P-channel mosfet.
DMP1096UCB4
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary (Typ. @ VGS = -4.5V, TA = +25°C)
VDSS -12V
RDS(on) 85mΩ
Qg 3.7nC
Qgd 0.6nC
ID -2.6.
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