ZXTP2013G Datasheet - Diodes

ZXTP2013G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR

ZXTP2013G Features

* BVCEO > -100V

* IC = -5A High Continuous Collector Current

* ICM = -10A Peak Pulse Current

* Low Saturation Voltage VCE(SAT) < -90mV @ -1A

* RSAT = 60mΩ for a Low Equivalent On-Resistance

* hFE Specified Up to -10A for a High Gain Hold-Up

* Lead-Free Finish; RoHS Compli

Datasheet Details

ZXTP2013G

364.11 KB

100v pnp medium power low saturation transistor.

📁 Related Datasheet

ZXTP2013G PNP MEDIUM POWER LOW SATURATION TRANSISTOR (Zetex Semiconductors)

ZXTP2013Z PNP LOW SATURATION MEDIUM POWER TRANSISTOR (Zetex Semiconductors)

ZXTP2012A PNP LOW SATURATION MEDIUM POWER TRANSISTOR (Zetex Semiconductors)

ZXTP2012G 60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR (Diodes)

ZXTP2012G PNP MEDIUM POWER LOW SATURATION TRANSISTOR (Zetex Semiconductors)

ZXTP2012Z 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR (Diodes)

ZXTP2014G PNP MEDIUM POWER LOW SATURATION TRANSISTOR (Zetex Semiconductors)

ZXTP2014G 140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR (Diodes)

TAGS

ZXTP2013G Distributor