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ZXTP2013G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR

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Description

A Product Line of Diodes Incorporated Green ZXTP2013G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 .

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Datasheet Specifications

Part number
ZXTP2013G
Manufacturer
DIODES ↗
File Size
364.11 KB
Datasheet
ZXTP2013G-Diodes.pdf
Description
100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR

Features

* BVCEO > -100V
* IC = -5A High Continuous Collector Current
* ICM = -10A Peak Pulse Current
* Low Saturation Voltage VCE(SAT) < -90mV @ -1A
* RSAT = 60mΩ for a Low Equivalent On-Resistance
* hFE Specified Up to -10A for a High Gain Hold-Up
* Lead-Free Finish; RoHS Compli

Applications

* the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between device terminals and PCB tracking. ZXTP2013G Datasheet Number: DS33714 Rev. 3 - 2 6 of 7 www. diodes. com May 2015 © Diodes Incorporated A Product Line of Diodes Incorporated Z

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