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GP201MHS18

Low VCE(SAT) Half Bridge IGBT Module

GP201MHS18 Features

* s s s s s Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 200A Per Arm KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 2.6V 200A 400A APPLICATIONS s s s s 11(C2) 1(E1C2) 2(E2) 6(G2) 7(E2) 3(C1) 5(E1) 4(G1) High Reliability I

GP201MHS18 Datasheet (129.26 KB)

Preview of GP201MHS18 PDF

Datasheet Details

Part number:

GP201MHS18

Manufacturer:

Dynex Semiconductor

File Size:

129.26 KB

Description:

Low vce(sat) half bridge igbt module.

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GP201MHS18 Low VCESAT Half Bridge IGBT Module Dynex Semiconductor

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