Part number:
GP201MHS18
Manufacturer:
Dynex Semiconductor
File Size:
129.26 KB
Description:
Low vce(sat) half bridge igbt module.
GP201MHS18_DynexSemiconductor.pdf
Datasheet Details
GP201MHS18 Features
* s s s s s Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 200A Per Arm KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 2.6V 200A 400A APPLICATIONS s s s s 11(C2) 1(E1C2) 2(E2) 6(G2) 7(E2) 3(C1) 5(E1) 4(G1) High Reliability I
GP201MHS18_DynexSemiconductor.pdf
Datasheet Details
GP201MHS18
Dynex Semiconductor
129.26 KB
Low vce(sat) half bridge igbt module.
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