GP2400ESM12 Datasheet - Dynex Semiconductor

GP2400ESM12 Powerline N-Channel Single Switch IGBT Module

GP2400ESM12 GP2400ESM12 Powerline N-Channel Single Switch IGBT Module Preliminary Information DS5360-1.1 May 2000 The GP2400ESM12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate drive considerations enabling operation directly from low power control circuitry. Fas.

GP2400ESM12 Features

* s s s s Fig. 1 Electrical connections - (not to scale) External connection C1 Aux C C2 C3 n - Channel Enhancement Mode Non Punch Through Silicon High Gate Input Impedance Optimised For High Power High Frequency Operation 1200V Rating 2400A Per Module s Isolated MMC Base with AlN s s G Aux E E1 E2

GP2400ESM12 Datasheet (169.18 KB)