Datasheet4U Logo Datasheet4U.com

RM11C SILICON RECTIFIER DIODES

RM11C Description

RM11A - RM11C PRV : 600 - 1000 Volts Io : 1.2 Amperes .

RM11C Features

* :
* High current capability High surge current capability High reliability Low reverse current Low forward voltage drop SILICON RECTIFIER DIODES D2 0.161 (4.10) 0.154 (3.90) 1.00 (25.4) MIN. 0.284 (7.20) 0.268 (6.84) MECHANICAL DATA :
* Case : D2 Molded plastic

📥 Download Datasheet

Preview of RM11C PDF
datasheet Preview Page 2

Datasheet Details

Part number
RM11C
Manufacturer
EIC discrete Semiconductors
File Size
39.50 KB
Datasheet
RM11C_EICdiscreteSemiconductors.pdf
Description
SILICON RECTIFIER DIODES

📁 Related Datasheet

  • RM110N85T2 - N-Channel Super Trench Power MOSFET (Rectron)
  • RM11A - Rectifier Diodes (Sanken electric)
  • RM1 - Silicon Diode (Sanken electric)
  • RM10 - POWER TRANSFORMER MODULES (FPE)
  • RM100C1A-XXF - FAST RECOVERY DIODE MODULE (Mitsubishi Electric Semiconductor)
  • RM100CA-XXF - FAST RECOVERY DIODE MODULE (Mitsubishi Electric Semiconductor)
  • RM100CZ-24 - FAST RECOVERY DIODE MODULE (Mitsubishi Electric Semiconductor)
  • RM100CZ-2H - FAST RECOVERY DIODE MODULE (Mitsubishi Electric Semiconductor)

📌 All Tags

SILICON RECTIFIER DIODES EIC discrete Semiconductors
EIC discrete Semiconductors RM11C-like datasheet