* G = Gate E = Emitter TAB = Collector G E (TAB) (TAB) G C E TO-247 AD (IXSH) TO-268 (D3) ( IXST) 1.13/10 Nm/lb.in. 6 300 g °C Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 4 TJ = 25°C TJ = 125°C 7 25 1 ±100 2.2 V V mA mA nA V BVCES VGE(t
IXST40N60B Datasheet (55.53 KB)
IXST40N60B
ETC
55.53 KB
High speed igbt.
High Speed IGBT
Short Circuit SOA Capability
IXSH 40N60B VCES = = IXST 40N60B IC25 VCE(sat) = tfi typ =
600V 75A 2.2V 100 ns
Preliminary data
Symbo.
📁 Related Datasheet
IXST40N60B High Speed IGBT (IXYS)
IXST45N120B High Voltage IGBT (IXYS)
IXST15N120B High Voltage IGBT (IXYS)
IXST15N120BD1 Improved SCSOA Capability (IXYS Corporation)
IXST24N60B High Speed IGBT (IXYS)
IXST24N60BD1 High Speed IGBT (IXYS)
IXST30N60B High Speed IGBT (IXYS Corporation)
IXST30N60B2D1 High Speed IGBT with Diode (IXYS)
IXST30N60BD1 High Speed IGBT (IXYS Corporation)
IXST30N60C High Speed IGBT (IXYS Corporation)
