* High Blocking Voltage
* Epitaxial Silicon drift region - fast switching - small tail current - low switching losses
* MOS gate turn-on for drive simplicity
* Molding epoxies meet UL 94 V-0 flammability classification Applications Mounting torque (TO-247) 1.13/10
IXST15N120BD1 Datasheet (88.56 KB)
IXST15N120BD1
IXYS Corporation
88.56 KB
Improved scsoa capability.
IXSH 15N120BD1 I = 30 A C25 IXST 15N120BD1 V = 1200 V CES "S" Series - Improved SCSOA Capability VCE(sat) = 3.4 V HIGH Voltage IGBT with Diode Preli.
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