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IXST15N120BD1

Improved SCSOA Capability

IXST15N120BD1 Features

* High Blocking Voltage

* Epitaxial Silicon drift region - fast switching - small tail current - low switching losses

* MOS gate turn-on for drive simplicity

* Molding epoxies meet UL 94 V-0 flammability classification Applications Mounting torque (TO-247) 1.13/10

IXST15N120BD1 Datasheet (88.56 KB)

Preview of IXST15N120BD1 PDF

Datasheet Details

Part number:

IXST15N120BD1

Manufacturer:

IXYS Corporation

File Size:

88.56 KB

Description:

Improved scsoa capability.
IXSH 15N120BD1 I = 30 A C25 IXST 15N120BD1 V = 1200 V CES "S" Series - Improved SCSOA Capability VCE(sat) = 3.4 V HIGH Voltage IGBT with Diode Preli.

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IXST15N120BD1 Improved SCSOA Capability IXYS Corporation

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