IXST30N60B2D1 High Speed IGBT with Diode

IXYS

Description

www.DataSheet4U.com High Speed IGBT with Diode Short Circuit SOA Capability Preliminary Data Sheet IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25.

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Datasheet Specifications

Part number: IXST30N60B2D1
Manufacturer: IXYS
File Size: 637.05 KB
Datasheet: IXST30N60B2D1_IXYS.pdf
Description: High Speed IGBT with Diode

Features

* International standard package
* Guaranteed Short Circuit SOA capability
* Low VCE(sat) - for low on-state conduction losses
* High current handling capability
* MOS Gate turn-on - drive simplicity
* Fast fall time for switching speeds up to 20 kHz A

Applications

* AC motor speed control
* Uninterruptible power supplies (UPS)
* Welding Advantages
* High power density Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 4.0 7.0 150 1 ± 100 2.5 V µA mA nA V VGE(th) ICES IGES VCE

IXST30N60B2D1 Distributors

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IXST30N60B2D1 High Speed IGBT with Diode IXYS

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