IXST15N120B, IXSH15N120B Datasheet - IXYS

IXST15N120B High Voltage IGBT

HIGH Voltage IGBT IXSH 15N120B IXST 15N120B "S" Series - Improved SCSOA Capability IC25 VCES VCE(sat) = 30 A = 1200 V = 3.4 V Preliminary data Symbol Test Conditions Maximum Ratings VCES VCGR V GES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient 1200 1200 ±20 ±30 TC = 25°C TC = 90°C TC = 25°C, 1 ms 30 15 60 V= GE 15 V, T J = 125°C, R G = 10 W Clamped inductive load I = 40 CM @ 0.8 VCES TJ = 125°C, VGE = 720 V; V.

IXST15N120B Features

* High Blocking Voltage

* Epitaxial Silicon drift region - fast switching - small tail current - low switching losses

* MOS gate turn-on for drive simplicity Molding epoxies meet UL 94 V-0 flammability classification Applications

* AC motor speed control

* DC

IXSH15N120B-IXYS.pdf

IXST15N120B Datasheet Preview — This datasheet PDF includes multiple part numbers: IXST15N120B, IXSH15N120B. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IXST15N120B, IXSH15N120B

Manufacturer:

IXYS

File Size:

53.28 KB

Description:

High voltage igbt.

Note:

This datasheet PDF includes multiple part numbers: IXST15N120B, IXSH15N120B.
Please refer to the document for exact specifications by model.

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TAGS

IXST15N120B IXSH15N120B High Voltage IGBT IXYS

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