* l Mounting torque (TO-247) 1.13/10 Nm/lb.in. 300 l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247 TO-268 Epitaxial Silicon drift region - fast switching - small tail current MOS gate turn-on for drive simplicity 6 4 Applications Symbol Test Condit
IXST35N120B Datasheet (82.37 KB)
IXST35N120B
IXYS Corporation
82.37 KB
Igbt.
IGBT IXSH 35N120B IXST 35N120B "S" Series - Improved SCSOA Capability IC25 = 70 A VCES = 1200 V VCE(sat) = 3.6 V Symbol VCES VCGR VGES VGEM IC25 I.
📁 Related Datasheet
IXST30N60B High Speed IGBT (IXYS Corporation)
IXST30N60B2D1 High Speed IGBT with Diode (IXYS)
IXST30N60BD1 High Speed IGBT (IXYS Corporation)
IXST30N60C High Speed IGBT (IXYS Corporation)
IXST30N60CD1 Short Circuit SOA Capability (IXYS Corporation)
IXST15N120B High Voltage IGBT (IXYS)
IXST15N120BD1 Improved SCSOA Capability (IXYS Corporation)
IXST24N60B High Speed IGBT (IXYS)
IXST24N60BD1 High Speed IGBT (IXYS)
IXST40N60B High Speed IGBT (ETC)
