l l
Mounting torque
(TO-247) TO-247 TO-268
1.13/10 Nm/lb.in. 6 4 300 g g °C
l l
International standard packages Short Circuit SOA capability High frequency IGBT New
✔ IXST30N60C Application
l
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600
PDF File Details
IXYS Corporation manufacturer logo
and representative part image
IXST30N60B, IXYS Corporation
High Speed IGBT
IXSH/IXST 30N60B IXSH/IXST 30N60C Short Circuit SOA Capability
VCES
ICES
tfi
600 V 2.0 V 140 ns 600 V 2.5 V 70 ns
Symbol VCES VCG.
IXST30N60B2D1, IXYS
..
High Speed IGBT with Diode
Short Circuit SOA Capability
Preliminary Data Sheet
IXSH 30N60B2D1 IXST 30N60B2D1
VCES = 600 V I C25.
IXST30N60BD1, IXYS Corporation
High Speed IGBT with Diode
IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1
VCES IC25
VCE(sat)
Short Circuit SOA Capability
tfi
= 600 V = 55 A = 2.0 V =.
IXST30N60CD1, IXYS Corporation
High Speed IGBT with Diode
IXSH 30 N60CD1 IXSK 30 N60CD1 IXST 30 N60CD1
Short Circuit SOA Capability
Preliminary data
VCES IC25 VCE(sat) t fi
TO-24.
IXST35N120B, IXYS Corporation
IGBT
IXSH 35N120B IXST 35N120B
S Series - Improved SCSOA Capability
IC25 = 70 A VCES = 1200 V VCE(sat) = 3.6 V
Symbol VCES VCGR VGES VGEM IC25 I.
IXST15N120B, IXYS
HIGH Voltage IGBT
IXSH 15N120B IXST 15N120B
S Series - Improved SCSOA Capability
IC25 VCES VCE(sat)
= 30 A = 1200 V = 3.4 V
Preliminary data
S.
IXST15N120BD1, IXYS Corporation
IXSH 15N120BD1 I = 30 A C25 IXST 15N120BD1 V = 1200 V CES S Series - Improved SCSOA Capability VCE(sat) = 3.4 V
HIGH Voltage IGBT with Diode
Preli.
IXST24N60B, IXYS
High Speed IGBT
Short Circuit SOA Capability
IXSH IXST IXSH IXST
24N60B 24N60B 24N60BD1 24N60BD1
VCES IC25 VCE(sat) tfi typ
= 600 V = 48 A = 2.5 V.