* G = Gate E = Emitter TAB = Collector G E (TAB) (TAB) G C E TO-247 AD (IXSH) TO-268 (D3) ( IXST) 1.13/10 Nm/lb.in. 6 300 g °C Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 4 TJ = 25°C TJ = 125°C 7 25 1 ±100 2.2 V V mA mA nA V BVCES VGE(t
IXSH40N60B Datasheet (55.53 KB)
IXSH40N60B
ETC
55.53 KB
High speed igbt.
High Speed IGBT
Short Circuit SOA Capability
IXSH 40N60B VCES = = IXST 40N60B IC25 VCE(sat) = tfi typ =
600V 75A 2.2V 100 ns
Preliminary data
Symbo.
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