IXSH45N120B Datasheet - IXYS

IXSH45N120B High Voltage IGBT

High Voltage IGBT IXSH 45N120B IXST 45N120B "S" Series - Improved SCSOA Capability IC25 VCES VCE(sat) = 75 A = 1200 V = 3.0 V Preliminary data Symbol V CES VCGR VGES VGEM IC25 I C90 ICM SSOA (RBSOA) tSC Test Conditions Maximum Ratings T J = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient 1200 1200 ±20 ±30 TC = 25°C (limited by leads) T C = 90°C TC = 25°C, 1 ms 75 45 180 VGE= 15 V, TJ = 125°C, RG = 5 W Clamped inductive load ICM = 90 @ 0.8 V CES TJ = 125°C,.

IXSH45N120B Features

* Epitaxial Silicon drift region - fast switching - small tail current

* MOS gate turn-on for drive simplicity Applications

* AC motor speed control

* DC servo and robot drives

* Uninterruptible power supplies (UPS)

* Switched-mode and resonant-mode po

IXSH45N120B Datasheet (53.55 KB)

IXSH45N120B Datasheet Preview — Preview of IXSH45N120B PDF

Datasheet Details

Part number:

IXSH45N120B

Manufacturer:

IXYS

File Size:

53.55 KB

Description:

High voltage igbt.

📁 Related Datasheet

IXSH45N120 High Voltage/ Low VCE(sat) IGBT (ETC)

IXSH45N120 High Voltage IGBT (IXYS)

IXSH45N100 Low VCE(sat) IGBT - Short Circuit SOA Capability (IXYS Corporation)

IXSH40N60 High Speed IGBT (ETC)

IXSH40N60 Low VCE(sat) IGBT (IXYS Corporation)

IXSH40N60A Low VCE(sat) IGBT (IXYS Corporation)

IXSH40N60B High Speed IGBT (ETC)

IXSH40N60B High Speed IGBT (IXYS)

IXSH10N60B2D1 High-Speed IGBT (IXYS)

IXSH15N120A IGBT (IXYS Corporation)

TAGS

IXSH45N120B High Voltage IGBT IXYS

Image Gallery

IXSH45N120B Distributor