IXSH45N120 Datasheet - ETC

IXSH45N120 - High Voltage/ Low VCE(sat) IGBT

High Voltage, Low VCE(sat) IGBT Short Circuit SOA Capability IXSH 45N120 VCES IC25 VCE(sat) = 1200 V = 75 A = 3V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C, limited by leads TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 2.7 W Clamped inductive load, L = 30 mH VGE = 15 V, VCE = 0.6 VCES, TJ = 125°C RG = 22 W, non repetitive TC = 2.

IXSH45N120 Features

* W °C °C °C q q q Mounting torque 1.13/10 Nm/lb.in. q 6 300 g °C q Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s q International standard package JEDEC TO-247 High frequency IGBT with guaranteed Short Circuit SOA capability Fast Fall Time for switching speeds u

IXSH45N120_ETC.pdf

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Datasheet Details

Part number:

IXSH45N120

Manufacturer:

ETC

File Size:

88.90 KB

Description:

High voltage/ low vce(sat) igbt.

IXSH45N120 Distributor

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IXSH45N120 High Voltage Low VCEsat IGBT ETC