IXSH40N60 Datasheet - ETC

IXSH40N60 High Speed IGBT

High Speed IGBT Short Circuit SOA Capability IXSH 40N60B VCES = = IXST 40N60B IC25 VCE(sat) = tfi typ = 600V 75A 2.2V 100 ns Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 2.7 W Clamped induc.

IXSH40N60 Features

* G = Gate E = Emitter TAB = Collector G E (TAB) (TAB) G C E TO-247 AD (IXSH) TO-268 (D3) ( IXST) 1.13/10 Nm/lb.in. 6 300 g °C Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 4 TJ = 25°C TJ = 125°C 7 25 1 ±100 2.2 V V mA mA nA V BVCES VGE(t

IXSH40N60_ETC.pdf