TC112-10
ETC
140.41kb
Thyristors (triacs).
TAGS
📁 Related Datasheet
TC112-16 - thyristors (triacs)
(ETC)
ТС106-10, TC112-10, TC112-16, ТС122-20, ТС122-25, TC132-40, TC132-50, TC142-63, TC142-80
Симметричные тиристоры (симисторы) изготовлены на основе пяти.
TC112 - TIRISTORI
(M&G Electronic)
TIRISTORI I TRIJACI
TIR
TRIJACI. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TIR
UDRM ITAV
IGT
Tip Cena URRM
Case
(V) (A) (.
TC1121 - 100mA Charge Pump Voltage Converter
(Microchip)
Obsolete Device
TC1121
100mA Charge Pump Voltage Converter with Shutdown
Features:
• Optional High-Frequency Operation Allows Use of Small Capacitors.
TC110 - PFM/PWM Step-Up DC/DC Controller
(Microchip)
TC110
PFM/PWM Step-Up DC/DC Controller
Features
• • • • • Assured Start-up at 0.9V 50µA (Typ) Supply Current (fOSC = 100kHz) 300mA Output Current @ VI.
TC1100H - SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE
(Lite-On Technology)
LITE-ON SEMICONDUCTOR
TC0640H thru TC3500H
Bi-Directional VDRM IPP - 58 to 320 Volts - 100 Amperes
SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE
.
TC1100H - SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE
(Lite-On)
LITE-ON SEMICONDUCTOR
TC0640H thru TC3500H
Bi-Directional VDRM IPP - 58 to 320 Volts - 100 Amperes
SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE
.
TC1101 - Low Noise and Medium Power GaAs FETs
(Transcom)
TRANSCOM
TC1101
January 2002
Low Noise and Medium Power GaAs FETs
FEATURES • • • • • • • Low Noise Figure: NF = 0.5 dB Typical at 12 GHz High Associa.
TC1102 - Super Low Noise GaAs FETs
(Transcom)
TRANSCOM
TC1102
January 2002
Super Low Noise GaAs FETs
FEATURES • • • • • Low Noise Figure: NF = 0.5 dB Typical at 12 GHz High Associated Gain: Ga = .
TC1102 - SMD TELECOIL 10.5X1.4X2MM
(Premo)
..
.
TC1107 - 300mA CMOS LDO
(Microchip)
TC1107
300mA CMOS LDO with Shutdown and VREF Bypass
Features
• • • • • • • • • Extremely Low Supply Current (50µA, Typ.) Very Low Dropout Voltage 300m.
Stock and price